Evidence map›Paper›PMID 42576675›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Preventing Plasma-Induced Resist Hardening in Molybdenum Disulfide Transistors via Sacrificial Metal Mask Lithography.

Dahyeon Kim, Yanfeng Zhao, Sungyeon Kim, Seungchan Lee, Sangmin Eom, Tae Yeon Kim, Hyun Seok Lee, Joonki Suh, Byungjo Kim, Myungsoo Kim

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Dahyeon KimDepartment of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Yanfeng ZhaoGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0009-0009-3117-1949
Sungyeon KimDepartment of Material Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Seungchan LeeDepartment of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Sangmin EomGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Tae Yeon KimDepartment of Physics, Chungbuk National University, Cheongju, South Korea.
Hyun Seok LeeDepartment of Physics, Chungbuk National University, Cheongju, South Korea.
Joonki SuhDepartment of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.ORCID https://orcid.org/0000-0002-0221-8447
Byungjo KimGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
Myungsoo KimDepartment of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID https://orcid.org/0000-0002-5169-6381

Funding

InnoCORE program by MSIT 1.260020.01InnoCORE program by MSIT 1.260036.01Korea Institute for Advancement of Technology (KIAT) P0023703Korea Institute of Science and Technology Information (KISTI) National Supercomputing Center KSC-2025-CRE-0318National Research Foundation (NRF) funded by the Ministry of Science and ICT (MSIT) IITP-2026-RS-2022-00156361National Research Foundation (NRF) funded by the Ministry of Science and ICT (MSIT) RS-2024-00337000National Research Foundation (NRF) funded by the Ministry of Science and ICT (MSIT) RS-2025-16064758National Research Foundation (NRF) funded by the Ministry of Science and ICT (MSIT) RS-2026-25578911
6 · The paper itself

Abstract

Achieving the theoretical performance of 2D molybdenum disulfide (MoS

Indexed as

2D materialsmolybdenum disulfidephotoresistresiduetransistors

Identifiers

PMID42576675
PMCPMC13653343

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.