Evidence map›Paper›PMID 42415396›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.

Zunke Liu, Changqing Lin, Yueying Zhang, Yuqi Zhang, Yihui Xie, Sheshicheng Chen, Hongkai Zhou, Zedong Lin, Wei Liu, Mingdun Liao and 6 more

Abstract read
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Zunke LiuNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Changqing LinInstitute of Systems and Physical Biology, Shenzhen Bay Laboratory, Shenzhen, Guangdong, P. R. China.ORCID https://orcid.org/0009-0004-7698-6803
Yueying ZhangNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Yuqi ZhangSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, P. R. China.
Yihui XieNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Sheshicheng ChenNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Hongkai ZhouNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Zedong LinSchool of Materials Science and Engineering, Taizhou University, Taizhou, P. R. China.
Wei LiuNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Mingdun LiaoNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Chuanxiao XiaoNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.ORCID https://orcid.org/0000-0002-4136-2249
Zhiqin YingNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.
Xi YangNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.ORCID https://orcid.org/0000-0003-1773-2497
Zhenhai YangSchool of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, P. R. China.ORCID https://orcid.org/0000-0002-0429-972X
Yuheng ZengNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.ORCID https://orcid.org/0000-0002-0193-9971
Jichun YeNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo, P. R. China.ORCID https://orcid.org/0000-0002-3901-7155

Funding

China Postdoctoral Science Foundation GZB20250140International Partnership Program of Chinese Academy of Sciences 181GJHZ2024183MIKey Research and Development Program of Zhejiang Province 2021C01006Key Research and Development Program of Zhejiang Province 2024C01055Key Technologies Research and Development Program of Anhui Province 202423h08050004National Natural Science Foundation of China 62474178Ningbo "Innovation 2025" Major Project 2022Z114Ningbo "Innovation 2035" Major Project 2024Z243Ningbo International science and Technology Cooperation Program 2024H028Youth Innovation Promotion Association, CAS 2023310Zhejiang Provincial Natural Science Foundation LQN26F040010
6 · The paper itself

Abstract

Tunnel oxide passivating contact (TOPCon) technology has emerged as an industrial cornerstone for high-efficiency crystalline silicon (c-Si) solar cells. However, its passivation performance remains constrained by the thermal fragility of the ultrathin silicon dioxide (SiO

Indexed as

N‐incorporated poly‐SipinholeSiOxNystressTOPCon

Identifiers

PMID42415396
PMCPMC13471792

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.