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ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.

Zunke Liu et al.PubMed ↗Full text ↗Publisher ↗

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Full record →Abstract, authors, funding and every citing paper · PMID 42415396