Evidence map›Paper›PMID 42081509›Full record

ArticleACS applied materials & interfaces2026

Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors.

Apu Das, Agniva Paul, Mohit Tewari, Zhao-Feng Lou, Yii-Tay Chang, Asim Senapati, Gautham Kumar, Yannick Raffel, Artur Useinov, Niall Tumilty and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Apu DasCollege of Semiconductor Research, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.
Agniva PaulCollege of Semiconductor Research, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.
Mohit TewariElectrical Engineering, Indian Institute of Technology Gandhinagar, Palaj 382055, Gujarat, India.
Zhao-Feng LouGraduate Institute of Electronics Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Da'an District, Taipei City 10617, Taiwan.
Yii-Tay ChangGraduate Institute of Electronics Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Da'an District, Taipei City 10617, Taiwan.
Asim SenapatiCollege of Semiconductor Research, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.
Gautham KumarCollege of Semiconductor Research, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.
Yannick RaffelFraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies, An der Bartlake 5, Dresden 01109, Germany.
Artur UseinovInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, MIRC Building, 1001 University Road, Hsinchu 300, Taiwan, ROC.
Niall TumiltyInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, MIRC Building, 1001 University Road, Hsinchu 300, Taiwan, ROC.ORCID 0000-0003-1212-3326
Tian-Li WuInstitute of Electronics, National Yang Ming Chiao Tung University, Engineering Building D, 1001 University Road, Hsinchu 300, Taiwan, ROC.ORCID 0000-0001-6788-5470
Sandip LashkareElectrical Engineering, Indian Institute of Technology Gandhinagar, Palaj 382055, Gujarat, India.
Tarun AgarwalElectrical Engineering, Indian Institute of Technology Gandhinagar, Palaj 382055, Gujarat, India.
Min-Hung LeeGraduate Institute of Electronics Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Da'an District, Taipei City 10617, Taiwan.ORCID 0000-0002-2007-2875
Sourav DeCollege of Semiconductor Research, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.ORCID 0000-0002-1930-8799

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Hafnium-oxide-based ferroelectric field-effect transistors are widely regarded as strong candidates for embedded nonvolatile memory, but their practical deployment remains limited by premature endurance failure, typically after only about 10

Indexed as

charge pumpingendurance degradationferroelectric fatigueferroelectric field-effect transistorshafnium oxideinterface charge trappingnonvolatile memoryoxygen vacancy redistribution

Identifiers

PMID42081509
PMCPMC13195580

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.