ArticleACS applied materials & interfaces2025
Current-Induced Evolving Mechanical Properties, Formation of Defects, and Interfacial Intermetallic Growth in the Interconnects Bonded with Au Wire.
Article in ACS applied materials & interfaces, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Continuously improving chip integration and increasing packaging density increase the risk of performance degradation and electromigration (EM) failure on the bonding interface during electrical transmission. While EM failure, as a time-accumulated failure, is one core challenge of semiconductor reliability and is particularly severe in highly integrated chips. However, the polarity differences existing in commercial devices and the evolving polarity characteristics of microscale bonding interfaces have not been well addressed. Therefore, this study describes the polarity effects of EM in a commercial chip-end Au-Al system and reveals the evolution of intermetallic compound (IMC) growth at bonding interfaces under high-density currents. An EM simulation model is developed to jointly analyze the influence of current-induced polarity effects on the evolution of material migration and IMC growth together with experimental results. Specifically, under the influence of the polarity effect, the thickness of the anode IMC layer is approximately twice as thick as that of the cathode. The IMC thickness on both sides is much thicker than the center under the influence of the size effect. Unlike previous studies, the IMC at the commercial bonding interface is mainly the Al
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