Evidence map›Paper›PMID 40102435›Full record

ArticleNature communications2025

Ultrahigh dielectric permittivity in Hf

Wen Di Zhang, Zi Zheng Song, Shu Qi Tang, Jin Chen Wei, Yan Cheng, Bing Li, Shi You Chen, Zi Bin Chen, An Quan Jiang

Abstract read
In one paragraph

Article in Nature communications, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed.

  1. Enhancing the Energy Storage Performance of Flexible NaMaterials (Basel, Switzerland) · 2026
    Article
  2. Article
  3. Article
  4. Article
  5. Article
  6. Deposition of HfONanomaterials (Basel, Switzerland) · 2025
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Wen Di ZhangSchool of Microelectronics, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0001-8181-9197
Zi Zheng SongState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China.
Shu Qi TangSchool of Microelectronics, Fudan University, Shanghai, China.
Jin Chen WeiSchool of Microelectronics, Fudan University, Shanghai, China.
Yan ChengKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, China.
Bing LiSchool of Life Science and Technology, ShanghaiTech University, Shanghai, China.
Shi You ChenSchool of Microelectronics, Fudan University, Shanghai, China. chensy@fudan.edu.cn.ORCID http://orcid.org/0000-0002-4039-8549
Zi Bin ChenState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, Hong Kong, China. zi-bin.chen@polyu.edu.hk.ORCID http://orcid.org/0000-0002-7144-1861
An Quan JiangSchool of Microelectronics, Fudan University, Shanghai, China. aqjiang@fudan.edu.cn.ORCID http://orcid.org/0000-0002-0272-1552

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133-152 J/cm

Identifiers

PMID40102435
PMCPMC11920517

What OpenQuestion holds

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LicenceCC BY-NC-ND
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.