ArticleNano letters2024
Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes.
Article in Nano letters, 2024. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
5 citing papers in PubMed.
- Flexible h-BN/GaN Heterostructure Thin-Film Piezoelectric Sensors for Harsh Environments.Materials (Basel, Switzerland) · 2026Article
- 2D Transition Metal Carbo-Chalcogenides: An Emerging Family of Layered Materials.Chemphyschem : a European journal of chemical physics and physical chemistry · 2026Review
- Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics.Molecules (Basel, Switzerland) · 2025Article
- Homoepitaxial growth of isotopically enriched hNPJ 2D materials and applications · 2025Article
- Hexagonal Boron Nitride Based Photonic Quantum Technologies.Materials (Basel, Switzerland) · 2024Review
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Authors and funding
13 authors.
Funding
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Abstract
Although large efforts have been made to improve the growth of hexagonal boron nitride (hBN) by heteroepitaxy, the non-native substrates remain a fundamental factor that limits the quality. This problem can be solved by homoepitaxy, which is the growth of hBN on hBN substrates. In this report, we demonstrate the homoepitaxial growth of triangular BN grains on exfoliated hBN flakes by Metal-Organic Vapor Phase Epitaxy and show by atomic force microscopy and photoluminescence that the stacking of these triangular islands can deviate from the AA' stacking of hBN. We show that the stacking order is enforced by the crystallographic direction of the edge of the exfoliated hBN flakes, with armchair edges allowing for centrosymmetric stacking, whereas zigzag edges lead to the growth of noncentrosymmetric BN polytypes. Our results indicate pathways to grow homoepitaxial BN with tunable layer stacking, which is required to induce piezoelectricity or ferroelectricity.
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