ArticleMolecules (Basel, Switzerland)2025
Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics.
Yi Peng et al.PubMed ↗Full text ↗Publisher ↗
No numbers read from the abstract.
1 paper cites it
this papercites it