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ArticleMolecules (Basel, Switzerland)2025

Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics.

Yi Peng et al.PubMed ↗Full text ↗Publisher ↗

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1 paper cites it

2025
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Full record →Abstract, authors, funding and every citing paper · PMID 40142082