ReviewMicromachines2023
Emerging SiC Applications beyond Power Electronic Devices.
Review in Micromachines, 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
15 citing papers in PubMed.
- Excitonic Engineering in 2D-SiC through Organic Donor-Acceptor Adsorption.Precision chemistry · 2026Article
- Microstructure-Driven Loss Mechanisms and Tensor-Based FEM Calibration.Micromachines · 2026Article
- Editorial for the Special Issue on SiC Based Miniaturized Devices, 3rd Edition.Micromachines · 2026Article
- Heteroepitaxial 3C-SiC for MEMS Applications.Micromachines · 2026Review
- Mechanisms and advances in field assisted machining of SiC.The International journal, advanced manufacturing technology · 2026Review
- Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers.Micromachines · 2025Article
- Optimization of SiC-TiC Composite Manufacturing by Electroconsolidation Method.Materials (Basel, Switzerland) · 2025Article
- Surface Modification and Crystal Quality Improvement of 4H-SiC Film via Laser Treatment: Comparison of Continuous Wave and Femtosecond Pulse Laser.Materials (Basel, Switzerland) · 2025Article
- Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization.Micromachines · 2025Review
- Model of Quality Factor for (111) 3C-SiC Double-Clamped Beams.Micromachines · 2025Article
- Effects of High-Temperature Treatments in Inert Atmosphere on 4H-SiC Substrates and Epitaxial Layers.Materials (Basel, Switzerland) · 2024Article
- The Effect of Fractional Composition on the Graphite Matrices' Porosity.Materials (Basel, Switzerland) · 2024Article
- A resilient type-III broken gap GaScientific reports · 2024Article
- Investigations of InNanomaterials (Basel, Switzerland) · 2024Article
- Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC.Micromachines · 2024Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.