ArticleNanomaterials (Basel, Switzerland)2023
Direct Synthesis of Vertical Self-Assembly Oriented Hexagonal Boron Nitride on Gallium Nitride and Ultrahigh Photoresponse Ultraviolet Photodetectors.
Article in Nanomaterials (Basel, Switzerland), 2023. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics.Molecules (Basel, Switzerland) · 2025Article
- Functional Nanomaterials for Sensing and Detection.Nanomaterials (Basel, Switzerland) · 2024Article
- Hexagonal Boron Nitride as Filler for Silica-Based Elastomer Nanocomposites.Nanomaterials (Basel, Switzerland) · 2023Article
- Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors.Materials (Basel, Switzerland) · 2023Review
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Authors and funding
7 authors.
Funding
Abstract
The applications of three-dimensional materials combined with two-dimensional materials are attractive for constructing high-performance electronic and photoelectronic devices because of their remarkable electronic and optical properties. However, traditional preparation methods usually involve mechanical transfer, which has a complicated process and cannot avoid contamination. In this work, chemical vapor deposition was proposed to vertically synthesize self-assembly oriented hexagonal boron nitride on gallium nitride directly. The material composition, crystalline quality and orientation were investigated using multiple characterization methods. Thermal conductivity was found to be enhanced twofold in the h-BN incorporated sample by using the optothermal Raman technique. A vertical-ordered (VO)h-BN/GaN heterojunction photodetector was produced based on the synthesis. The photodetector exhibited a high ultraviolet photoresponsivity of up to 1970.7 mA/W, and detectivity up to 2.6 × 10
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