ReviewMicromachines2022
Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
Review in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
13 citing papers in PubMed.
- High-Sensitivity AlGaN/GaN HFET Implantable Neural Probe Without Gate Control Enabled by Photoelectrochemical Etching.Micromachines · 2026Article
- Article
- Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal.Micromachines · 2026Article
- AlGaN/GaN HEMT Biosensors for Next-Generation Applications: a State-of-the-Art Review.Applied biochemistry and biotechnology · 2026Review
- Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels.Materials (Basel, Switzerland) · 2026Article
- Materials challenges in solid-state sensors for continuous monitoring of ions in water.Beilstein journal of nanotechnology · 2026Review
- Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review.Micromachines · 2025Review
- Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer.Micromachines · 2025Article
- The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters.Nanomaterials (Basel, Switzerland) · 2024Article
- Properties Investigation and Damage Analysis of GaN Photoconductive Semiconductor Switch Based on SiC Substrate.Micromachines · 2024Article
- A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers.Micromachines · 2024Article
- Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure.Micromachines · 2023Article
- AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.Materials (Basel, Switzerland) · 2023Article
Corrections and comments
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Authors and funding
5 authors.
Funding
Abstract
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device's performance are addressed.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.