ReviewiScience2022
Two dimensional semiconducting materials for ultimately scaled transistors.
Review in iScience, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
21 citing papers in PubMed.
- Two-Dimensional Flash Memory: Materials, Interfaces, and Storage-Computing Convergence.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Atomic-scale mechanism of anisotropic ion migration in 2D BiNature communications · 2026Article
- Wafer-scale 2D MoSNature communications · 2026Article
- Tribranched Multiblock Copolymers Mimicking the Molecular Claw Design in N-Type Conjugated Polymers for High-Yield Semiconducting Carbon Nanotube Sorting and Phototransistor Memory Applications.ACS applied materials & interfaces · 2026Article
- Revealing and engineering contact-origin noise in ultrathin tellurium transistors.Nanoscale advances · 2026Article
- Bismuth Confinement: A Strategy for Low Resistance and Good Thermal Endurance of Integrated Contacts to MoSACS nano · 2026Article
- Impact of Device Architecture on Proton Detection Efficiency in 2D Perovskite Thick Film Detectors.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Strategic Mobility Engineering in 2D Semiconductor-based FETs for Enhanced Electronic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Selective Wet Etching for Scalable Nanofabrication of Patterned MXene Thin Films.Nano letters · 2025Article
- Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution.Nano-micro letters · 2025Review
- Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors.Nature communications · 2025Article
- Tailored Growth of Transition Metal Dichalcogenides' Monolayers by Chemical Vapor Deposition.Small (Weinheim an der Bergstrasse, Germany) · 2025Review
- Advances in core technologies for semiconductor manufacturing: applications and challenges of atomic layer etching, neutral beam etching and atomic layer deposition.Nanoscale advances · 2025Review
- Investigating Floating-Gate Topology Influence on van der Waals Memory Performance.Nanomaterials (Basel, Switzerland) · 2025Article
- Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSeNano letters · 2025Article
- Recent advances in CMOS-compatible synthesis and integration of 2D materials.Nano convergence · 2025Review
- Prospects of Band Structure Engineering in MXenes for Active Switching MXetronics: Computational Insights and Experimental Approaches.Materials (Basel, Switzerland) · 2024Review
- 2D amorphous solids for sub-nanometer scale devices.Nano convergence · 2024Review
- Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor.Nano-micro letters · 2024Review
- Transfer of 2D Films: From Imperfection to Perfection.ACS nano · 2024Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.