ArticleMicromachines2019
Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices.
Article in Micromachines, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Editorial for the Special Issue on the ICAE 2019.Micromachines · 2020Article
- Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device.Micromachines · 2020Article
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4 authors.
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Abstract
This paper reports on the optimization of the device and wiring in a via structure applied to multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the Tungsten (W) plug process of the logic device by following the most optimized barrier deposition scheme of RF etching 200 Å IMP Ti (ion metal plasma titanium) 200 Å CVD TiN (titanium nitride deposited by chemical vapor deposition) 2 × 50 Å. The resistivities of the glue layer and barrier, i.e., IMP Ti and CVD TiN, were 73 and 280 μΩ·cm, respectively, and the bottom coverages were 57% and 80%, respectively, at a 3.2:1 aspect ratio (A/R). The specific resistance of the tungsten film was approximately 11.5 μΩ·cm, and it was confirmed that the via filling could be performed smoothly. RF etching and IMP Ti should be at least 200 Å each, and CVD TiN can be performed satisfactorily with the existing 2 × 50 Å process. Tungsten deposition showed no difference in the via resistance with deposition temperature and SiH
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