ArticleMicrosystems & nanoengineering2019
Displacement Talbot lithography for nano-engineering of III-nitride materials.
Article in Microsystems & nanoengineering, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 12 papers.
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Who cites it
12 citing papers in PubMed, 47 citations in OpenAlex.
- Superlattice Architectures for Advancing Photothermal Catalysis: Mechanisms and Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Synthesis of Well-Ordered Functionalized Silicon Microwires Using Displacement Talbot Lithography for Photocatalysis.ACS omega · 2024Article
- Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones.Nanoscale research letters · 2022Article
- Enhanced Optical Biosensing by Aerotaxy Ga(As)P Nanowire Platforms Suitable for Scalable Production.ACS applied nano materials · 2022Article
- Tripling the light extraction efficiency of a deep ultraviolet LED using a nanostructured p-contact.Scientific reports · 2022Article
- A wafer-scale fabrication method for three-dimensional plasmonic hollow nanopillars.Nanoscale advances · 2021Article
- Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays.Nanomaterials (Basel, Switzerland) · 2021Review
- Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowires.ACS nano · 2021Article
- Tunneling-induced Talbot effect.Scientific reports · 2021Article
- Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography.Scientific reports · 2021Article
- Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods.Nanomaterials (Basel, Switzerland) · 2020Article
- Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays.Scientific reports · 2020Article
Corrections and comments
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Authors and funding
15 authors at 4 institutions in 3 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D
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