Evidence map›Paper›PMID 42918840›Full record

ArticleNature materials2026

Zero-field spin-wave networks with integrated non-volatile memory.

K O Nikolaev, D Raskhodchikov, J Bensmann, S Niehues, V D Bessonov, E Lomonte, L Jin, R Schmidt, J Kern, S Michaelis de Vasconcellos and 4 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

K O NikolaevInstitute of Applied Physics, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0002-0214-6850
D RaskhodchikovInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.
J BensmannInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0001-5716-4039
S NiehuesInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0009-0000-5062-2690
V D BessonovInstitute of Applied Physics, University of Münster, Münster, Germany.
E LomonteInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.
L JinInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0002-1464-3715
R SchmidtInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0002-8856-3347
J KernInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0001-5172-9094
S Michaelis de VasconcellosInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0003-3584-0635
R BratschitschInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0002-2368-2548
S O DemokritovInstitute of Applied Physics, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0003-4422-4201
W H P PerniceInstitute of Physics and Center for Nanotechnology, University of Münster, Münster, Germany.ORCID http://orcid.org/0000-0003-4569-4213
V E DemidovInstitute of Applied Physics, University of Münster, Münster, Germany. demidov@uni-muenster.de.ORCID http://orcid.org/0000-0002-7840-5679

Funding

Deutsche Forschungsgemeinschaft (German Research Foundation) 433682494 - SFB 1459
6 · The paper itself

Abstract

Magnonic circuits that use spin waves for nanoscale signal processing and computing are widely regarded as a promising alternative to traditional semiconductor electronics. However, a key missing component of this information nanotechnology is a feasible approach for the integration of memory directly into spin-wave devices. Here we propose a strategy for the implementation of built-in non-volatile memory, which uses the static magnetization states of waveguiding elements within a magnonic network fabricated from a low-loss magnetic insulator and operating at zero bias magnetic field. We show that switching the magnetization direction in these elements enables efficient control over spin-wave propagation paths. Furthermore, we suggest an approach to achieve low-energy selective magnetization switching in such systems. Our results open new possibilities for the realization of advanced, self-contained magnonic nano-circuits.

Identifiers

PMID42918840

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.