Evidence map›Paper›PMID 42907437›Full record

ArticleNature communications2026

Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory.

Feng-Hui Gong, Songge Zhang, Na Li, Xiangwei Guo, Yu-Ting Chen, Yin-Lian Zhu, Jing-Hui Wang, Shuai-Shuai Yin, Xiao-Long Li, Yu-Jia Wang and 7 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Feng-Hui Gong *Dongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-0853-0992
Songge Zhang *Department of Two-dimensional Materials, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-8921-5176
Na LiDongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China. lina@dimst.ac.cn.ORCID http://orcid.org/0000-0002-9190-1167
Xiangwei GuoState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0001-9219-4110
Yu-Ting ChenDongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China.
Yin-Lian ZhuDongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-0356-3306
Jing-Hui WangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
Shuai-Shuai YinShanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.
Xiao-Long LiShanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.ORCID http://orcid.org/0000-0002-1674-9345
Yu-Jia WangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0001-8434-4801
Hua YuDongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China.
Yun-Long TangShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.ORCID http://orcid.org/0000-0001-6555-3296
Zijian HongState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0002-3491-0884
Xiaoming TaoResearch Institute for Intelligent Wearable Systems, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0002-2406-0695
Yang ChaiDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.ORCID http://orcid.org/0000-0002-8943-0861
Guangyu ZhangDepartment of Two-dimensional Materials, Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.ORCID http://orcid.org/0000-0002-1242-4391
Xiu-Liang MaDongguan Institute of Materials Science and Technology, Chinese Acadeemy of Sciences, Dongguan, Guangdong, China. xlma@dimst.ac.cn.ORCID http://orcid.org/0000-0001-7143-2044

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12504020National Natural Science Foundation of China (National Science Foundation of China) 12574200National Natural Science Foundation of China (National Science Foundation of China) 52122101National Natural Science Foundation of China (National Science Foundation of China) 52471022National Natural Science Foundation of China (National Science Foundation of China) U24A2013
6 · The paper itself

Abstract

Ferroelectric flux-closures are promising candidates for high-performance memories, offering reversible switching and low power consumption. However, integration of ferroelectric flux-closures into memory devices is elusive, mostly due to the constraint from the substrate on which polar film is grown. Here, we demonstrate ferroelectric field-effect transistors (Fe-FETs) based on freestanding films with identical polar flux-closures. The retention of flux-closure in the freestanding film is driven by the intrinsic self-organization of polarization to minimize the combined elastic and electrostatic energies. The flux-closure structures exhibit low coercive electric field (E

Identifiers

PMID42907437
PMCPMC13686960

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.