Evidence map›Paper›PMID 42904153›Full record

ReviewRSC advances2026

Negative differential resistance in molecular junctions.

R Krishnapriya, Abhishek S Shekhawat, Gurpavit Kaur Bhatia, Anu Gupta, Lakshya Daukiya, Tulika Srivastava, Sandeep Munjal, Anand M Shrivastav, Rajesh Kumar, Shailendra K Saxena

Abstract readReview
In one paragraph

Review in RSC advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

R KrishnapriyaOptics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India shailens@srmist.edu.in.
Abhishek S ShekhawatOptics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India shailens@srmist.edu.in.ORCID https://orcid.org/0009-0009-1566-0056
Gurpavit Kaur BhatiaOptics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India shailens@srmist.edu.in.
Anu GuptaDepartment of Chemical and Biological Physics, Weizmann Institute of Science Rehovot 7610001 Israel.ORCID https://orcid.org/0000-0001-8624-4062
Lakshya DaukiyaDepartment of Physics, Central University of Rajasthan Ajmer 305817 India.
Tulika SrivastavaDepartment of Electronics & Communication, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India.
Sandeep MunjalSchool of Cybersecurity and Digital Forensics, National Forensic Sciences University Gandhinagar Gujarat 382007 India.
Anand M ShrivastavOptics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India shailens@srmist.edu.in.ORCID https://orcid.org/0000-0002-3257-2818
Rajesh KumarMaterials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore Simrol 453552 India rajeshkumar@iiti.ac.in.ORCID https://orcid.org/0000-0001-7977-986X
Shailendra K SaxenaOptics and NanoElectronics (ONE) Laboratory, Department of Physics and Nanotechnology, College of Engineering & Technology, SRM Institute of Science and Technology Kattankulathur Chennai India shailens@srmist.edu.in.ORCID https://orcid.org/0000-0001-7156-3407

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The occurrence of negative differential resistance (NDR) in the molecular junctions (MJs) is one of the fascinating phenomena in the field of molecular electronics (ME) characterized by a decrease in current with an increase in voltage. This inverse behaviour to Ohm's law gained prominence taking ME to the next generation, which includes neuromorphic computing, ultra-low power switches, high frequency oscillators, sensors and memory devices. This phenomenon in MJs is influenced by some key parameters, such as asymmetry in electrodes, coulomb blockade, charging effects, conformational changes in the molecules, redox reactions and the interface coupling (at molecule-electrode interface). This review covers the fundamental mechanisms of NDR and highlights several experimental and theoretical observations and finally discusses about the commercialization of NDR devices along with the challenges and future perspectives. By observing and understanding the advances of the NDR phenomenon, we can achieve the scalable, reproducible and stable NDR-based devices which enable us to step into the next generation of nanoelectronics devices.

Identifiers

PMID42904153
PMCPMC13682320

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.