ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Magnetoelectric Multiferroics for the Next-Generation Ultralow-Power Electronics.
Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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14 authors.
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Abstract
Magnetoelectric multiferroics enable voltage control of magnetic states for low-energy, non-volatile memory and logic. Their practical value, however, depends on the complete device pathway, not coupling strength alone. This Review evaluates materials, switching mechanisms, and devices against these requirements, distinguishing measured performance from projected targets. We compare three magnetoelectric random-access memory (MeRAM) routes with ferroelectric RAM and spin-transfer torque magnetic RAM, and assess magnetoelectric spin-orbit (MESO) logic alongside complementary metal-oxide-semiconductor (CMOS) technology and current-driven spintronics. MeRAM combines electric-field writing, magnetic storage, and nondestructive readout, with prospects for low write energy and closer memory-logic integration. However, no integrated device has yet combined these benefits with competitive speed, retention, endurance, read margin, and density. For magnetoelectric logic, projected low-voltage, non-volatile operation has yet to be matched by experimental demonstrations of the full conversion path, gain and fan-out. Results from BiFeO
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