Evidence map›Paper›PMID 42882703›Full record

ReviewMaterials (Basel, Switzerland)2026

Toward Intelligent Chemical Mechanical Polishing: Integrating Multiscale Modeling and Machine Learning.

Xin Wu, Quanzhou Yao

Abstract readReview
In one paragraph

Review in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Xin WuSchool of Automation and Intelligent Manufacturing, Southern University of Science and Technology, Shenzhen 518055, China.
Quanzhou YaoSchool of Automation and Intelligent Manufacturing, Southern University of Science and Technology, Shenzhen 518055, China.ORCID 0000-0002-9228-1553

Funding

National Natural Science Foundation of China 12302121Shenzhen Science and Technology Innovation Commission RCBS20231211090658097
6 · The paper itself

Abstract

Chemical mechanical polishing (CMP) remains the cornerstone planarization technology in advanced semiconductor manufacturing. As device architectures transition toward FinFETs, gate-all-around structures, heterogeneous integration, and wide-bandgap semiconductors, CMP must simultaneously deliver angstrom-level flatness, high selectivity, low damage, and improved sustainability. Against this background, research in CMP is moving beyond empirical trial-and-error toward a more integrated paradigm that combines consumables design, physics-based modeling, and data-driven intelligence. This review systematically summarizes recent progress in CMP from four interrelated perspectives. First, we examine advances in slurry and abrasive design, including morphology engineering, porous and core-shell abrasives, defect-controlled ceria systems, and environmentally friendlier chemical formulations, together with the emergence of photo-, electro-, ultrasonic-, plasma-, and gas-assisted CMP. Second, we review the multiscale modeling landscape, spanning macroscale planarization and profile evolution, mesoscale contact mechanics and slurry transport, and atomistic simulations based on first-principles calculations and reactive molecular dynamics. Third, we assess the rapidly growing role of machine learning in CMP, with emphasis on material removal rate prediction, surface quality evaluation, process monitoring, virtual metrology, and intelligent run-to-run control. Fourth, we discuss sustainability-oriented CMP, including source reduction, wastewater treatment and recycling, and the use of modeling and digital control to reduce non-productive resource consumption. By synthesizing developments across these areas, this manuscript highlights the current gaps in cross-scale model integration, physics-informed intelligent control, transferability across tools and materials, and life-cycle-oriented process design. We conclude by outlining how a closed-loop CMP ecosystem-linking materials innovation, mechanistic understanding, in situ sensing, and intelligent optimization-may support the next generation of high-efficiency, green, and manufacturable planarization technologies.

Indexed as

chemical mechanical polishingmachine learningmaterial removal mechanismmultiscale modelingprocess controlsustainability

Identifiers

PMID42882703
PMCPMC13666114

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.