Evidence map›Paper›PMID 42875647›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Re-Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors.

Jens Trommer, Juan P Martinez, Yuxuan He, Giulio Galderisi, Katrin Pingen, Eduardo Sergio Oliveros-Mata, Lisa Tellis, Cigdem Cakirlar, Christoph Beyer, Brojogopal Sapui and 10 more

Abstract readReview
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Jens TrommerNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0000-0003-2972-438X
Juan P MartinezNamlab gGmbH, Dresden, Saxony, Germany.
Yuxuan HeNamlab gGmbH, Dresden, Saxony, Germany.
Giulio GalderisiNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0000-0002-6997-5370
Katrin PingenNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0000-0001-6280-6307
Eduardo Sergio Oliveros-MataNamlab gGmbH, Dresden, Saxony, Germany.
Lisa TellisNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0009-0009-6746-6669
Cigdem CakirlarNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0000-0002-9751-1522
Christoph BeyerNamlab gGmbH, Dresden, Saxony, Germany.
Brojogopal SapuiNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0009-0003-2657-4205
Joachim KnochInstitute of Semiconductor Electronics, RWTH Aachen, Aachen, Germany.ORCID https://orcid.org/0000-0001-5136-9287
Klaus HofmannIntegrated Electronic Systems Lab, TU Darmstadt, Darmstadt, Germany.ORCID https://orcid.org/0000-0002-6675-0221
Sandro CarraraBio/CMOS Interfaces Lab Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland.ORCID https://orcid.org/0000-0003-0404-7917
Eugenio CantatoreDepartment of Electrical Engineering, Eindhoven University of Technology, Eindhoven, Netherlands.ORCID https://orcid.org/0000-0002-9646-7232
Max C LemmeInstitute of Semiconductor Electronics, RWTH Aachen, Aachen, Germany.
Ian O'ConnorCentrale Lyon, INSA Lyon, CNRS, Ecole Central Lyon, Ecully, France.
Akash KumarChair for Embedded Systems, Ruhr-University Bochum, Bochum, Germany.ORCID https://orcid.org/0000-0001-7125-1737
Andre HeinzigChair of Nanoelectronics, Technische Universität Dresden, Dresden, Germany.
Thomas MikolajickNamlab gGmbH, Dresden, Saxony, Germany.ORCID https://orcid.org/0000-0003-3814-0378
Walter M WeberInstitute of Solid State Electronics, TU Wien, Vienna, Austria.ORCID https://orcid.org/0000-0001-9504-5671

Funding

Bundesministerium für Bildung und Forschung DI-ReDesignEuropean Commission 101135316German Research Foundation 528378584
6 · The paper itself

Abstract

Reconfigurable field-effect transistors, short RFETs, are a unique class of emerging electronic devices that merge n-type, p-type, and ambipolar operation modes into a single element. Unlike conventional MOSFETs, the dominant carrier type in RFETs is purely defined by electrostatics and can be dynamically changed at runtime. This enables new design possibilities by enabling post-fabrication functionality definition, thereby increasing circuit density and adaptability without requiring additional feature-size scaling. However, the added value of the devices requires a reassessment of classical design paradigms to unlock their full potential. This paper aims to provide a comprehensive review of the state of the art in RFET circuit design. Starting from the underlying device physics and material systems, such as group-IV and two-dimensional (2D) materials, the manifold circuit design possibilities in digital, analog, and post-Shannon computing are introduced. We highlight how RFETs aim to enable simplified, energy-efficient, and reusable hardware for edge computing, hardware security, bio-sensing, and cryogenic electronics. Thereby, device- and circuit-level results are exemplified by measurements of transistors fabricated in an industrial 22 nm FDSOI technology. The paper also provides an overview of future key challenges in reliability, BEOL integration, and electronic design automation, offering an outlook on the path towards scalable, sustainable reconfigurable electronics.

Indexed as

bio‐sensorscircuit designcryogenic temperatureshardware securitylogic‐in‐memoryreconfigurable field effect transistorsvan‐der‐waals materials

Identifiers

PMID42875647
PMCPMC13668769

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.