ArticleNanomaterials (Basel, Switzerland)2026
Influence of Shelf-Aging on Resistive Switching Characteristics of Sol-Gel-Processed ZnO and Al-Doped ZnO Structures.
Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
2 authors.
Funding
Abstract
Sol-gel-processed zinc oxide (ZnO) is indispensable in various optoelectronic applications, such as quantum dot light-emitting diodes (QLEDs), due to its high electron transport capability and adjustable oxygen vacancy characteristics. However, its commercialization has been delayed by defect-related issues and a high sensitivity to fabrication conditions. ZnO exhibits complex aging behaviors, notably 'shelf-aging,' where device properties change unpredictably over time even without external stimuli. Recent studies suggest that this shelf-aging in QLEDs might relate to the resistive switching (RS) behavior in ZnO, affecting the current conduction mechanism through external bias and internal oxygen dynamics. Despite its significance, systematic studies on the shelf-aging effects in ZnO-based RS structures have been lacking. In this study, we fabricate RS devices using sol-gel-processed ZnO and aluminum-doped ZnO (AZO) as dielectric layers, employing indium tin oxide (ITO) and aluminum (Al) as electrodes-materials commonly utilized in QLEDs. Notably, the
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.