Evidence map›Paper›PMID 42864751›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic-Level Engineering.

Linfeng Yu, Hongkai Zhang, Haofeng Qin, Yi Zhang, Jinyuan Xu, Yiming Zhao, Dongliang Ding, Jianbin Xu, Sunmi Shin, Zhuhua Zhang and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Linfeng YuState Key Laboratory of Mechanics and Control for Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, People's Republic of China.
Hongkai ZhangState Key Laboratory of Advanced Design and Manufacturing Technology For Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, People's Republic of China.
Haofeng QinState Key Laboratory of Advanced Design and Manufacturing Technology For Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, People's Republic of China.
Yi ZhangState Key Laboratory of Advanced Design and Manufacturing Technology For Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, People's Republic of China.ORCID https://orcid.org/0009-0000-4519-787X
Jinyuan XuState Key Laboratory of Advanced Design and Manufacturing Technology For Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, People's Republic of China.
Yiming ZhaoDepartment of Mechanical Engineering, National University of Singapore, Singapore, Singapore.
Dongliang DingDepartment of Electronics Engineering, The Chinese University of Hong Kong, Hong Kong, People's Republic of China.ORCID https://orcid.org/0009-0009-9546-4265
Jianbin XuDepartment of Electronics Engineering, The Chinese University of Hong Kong, Hong Kong, People's Republic of China.
Sunmi ShinDepartment of Mechanical Engineering, National University of Singapore, Singapore, Singapore.
Zhuhua ZhangState Key Laboratory of Mechanics and Control for Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, People's Republic of China.
Guangzhao QinState Key Laboratory of Advanced Design and Manufacturing Technology For Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, People's Republic of China.

Funding

Basic Research Program of Jiangsu BK20243044Basic Research Program of Jiangsu BK20253025Basic Research Program of Jiangsu BK20253057Fundamental Research Funds for the Central Universities 531119200237Guangdong Basic and Applied Basic Research Foundation 2025A1515012237National Key R&D Program of China 2022YFA1203100National Key R&D Program of China 2023YFB2408100National Major Science and Technology Project of China 2025ZD0717301National Natural Science Foundation of China 12225205National Natural Science Foundation of China 12602172National Natural Science Foundation of China 52006057National Natural Science Foundation of China U2441272Open Project of Shaanxi Key Laboratory of Gear Transmission SKLGT-2024-005Open Research Fund of State Key Laboratory of Materials for Integrated Circuits SKLJC-K2026-04RGC Grants 14220022 JLFS/E-402/24State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle 72675007State Key Laboratory of Robotics and Systems at Harbin Institute of Technology SKLRS-2025-KF-10
6 · The paper itself

Abstract

The integration of gallium nitride (GaN) with ultrahigh-thermal-conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next-generation high-power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as Al

Indexed as

atomic‐level engineeringGaN/BAs heterojunctioninterfacial thermal conductancemachine learning potentialmultiscale simulation

Identifiers

PMID42864751
PMCPMC13658892

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.