ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Lattice Disorder in CuI Enables Filament-Free Transparent Memristors.
Yuzhao Ouyang, Ke Qu, Haonan Wang, Jianquan Liu, Wei Li, Zhuoran Ji, Jialin Yang, Qiuxiang Zhu, Zhenzhong Yang, Xiaodong Tang and 4 more
Abstract read
In one paragraphArticle in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 · Who and what moneyAuthors and funding
14 authors.
Yuzhao Ouyang *Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0009-0003-6065-9405 Ke Qu *Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Haonan Wang *Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Jianquan LiuKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Wei LiKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Zhuoran JiKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Jialin YangKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Qiuxiang ZhuKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-3515-315X Zhenzhong YangKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-7226-7973 Xiaodong TangKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.
Hui PengKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-9062-2799 Bobo TianKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-4251-2755 Chungang DuanKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-5380-4980 Chang YangKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering, East China Normal University, Shanghai, China.ORCID https://orcid.org/0000-0002-1380-9533 Funding
Fundamental Research Funds for the Central UniversitiesNational Key R&D Program of China 2021YFA1200700National Key R&D Program of China 2022YFA1402902National Key R&D Program of China 2024YFA1410700National Natural Science Foundation of China 52572129National Natural Science Foundation of China 62474066Science and Technology Commission of Shanghai Municipality 24JD1401200
6 · The paper itselfAbstract
The realization of invisible neuromorphic electronics hinges on transparent memories that reconcile high optical transparency with stable analog tunability, which is a challenge unmet by conventional filamentary devices. Here, we introduce an alloyed Cu
Indexed as
distributed ion migrationfilament‐free switchinginterfacial barrier modulationneuromorphic electronicsP‐type transparent memristor
Identifiers
PMID42860603
PMCPMC13655244
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