Evidence map›Paper›PMID 42851867›Full record

ArticleACS omega2026

Low-Leakage and Low-Voltage Rare-Metal-Free TFTs Using Solution Combustion-Synthesized Al

Candell Grace P Quino, Juan Paolo Bermundo, Rita Branquinho, Emanuel Carlos, Dian Budiarti Kastian, Kosuke O Hara, Yukiharu Uraoka

Abstract read
In one paragraph

Article in ACS omega, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Candell Grace P QuinoNara Institute of Science and Technology, Nara 6300192, Japan.ORCID https://orcid.org/0009-0006-3234-204X
Juan Paolo BermundoNara Institute of Science and Technology, Nara 6300192, Japan.ORCID https://orcid.org/0000-0002-9575-6112
Rita BranquinhoCENIMAT i3N, Department of Materials Science, NOVA School of Science and Technology (NOVA FCT) and CEMOP/UNINOVA, Nova University Lisbon, Caparica 2829516, Portugal.ORCID https://orcid.org/0000-0001-9771-8366
Emanuel CarlosCENIMAT i3N, Department of Materials Science, NOVA School of Science and Technology (NOVA FCT) and CEMOP/UNINOVA, Nova University Lisbon, Caparica 2829516, Portugal.ORCID https://orcid.org/0000-0002-5956-5757
Dian Budiarti KastianNara Institute of Science and Technology, Nara 6300192, Japan.
Kosuke O HaraNara Institute of Science and Technology, Nara 6300192, Japan.
Yukiharu UraokaNara Institute of Science and Technology, Nara 6300192, Japan.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Integrating high-κ dielectrics is essential for achieving low-voltage operation in cost-effective solution-processed thin-film transistors. However, solution-processed dielectrics often exhibit high leakage due to incomplete metal oxide stoichiometry and inherent film impurities. Here, we demonstrate a low-leakage and low-voltage Si

Identifiers

PMID42851867
PMCPMC13647409

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.