ArticleNanophotonics (Berlin, Germany)2026
Promoted Current Injection in GaInN/GaN Multi-Quantum Nanowire-Based LEDs Coated With AZO Using Atomic Layer Deposition.
Article in Nanophotonics (Berlin, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
GaInN/GaN multi-quantum shell (MQS) nanowires (NWs) are promising candidates for high-efficiency microscale and nanoscale light-emitting diodes (LEDs), offering reduced efficiency losses from the quantum-confined Stark effect and nonradiative recombination. However, the three-dimensional NW geometry complicates electrode deposition, leading to nonuniform current injection and emission variations. Here, we demonstrated enhanced current injection in NW-LEDs using a conformal aluminum-doped zinc oxide (AZO) film deposited via atomic layer deposition (ALD). Finite element simulations revealed that extended p-type electrode coverage can promote both axial and lateral current injection from the sidewalls, enhancing radiative recombination across the (0001), (1
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