Evidence map›Paper›PMID 42836135›Full record

ArticleNational science review2026

Optically locked low-noise photonic microwave oscillator.

Zexing Zhao, Bin Li, Kunpeng Jia, Chenye Qin, Xiaofan Zhang, Jingru Ji, Hua-Ying Liu, Xiao-Hui Tian, Zhong Yan, Xiaoshun Jiang and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in National science review, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Zexing ZhaoNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Bin LiNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Kunpeng JiaNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Chenye QinNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Xiaofan ZhangNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Jingru JiKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215213, China.
Hua-Ying LiuNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Xiao-Hui TianNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Zhong YanNanzhi Institute of Advanced Optoelectronic Integration, Nanjing 211800, China.
Xiaoshun JiangNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Xinlun CaiState Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
Biaobing JinNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.ORCID https://orcid.org/0000-0001-9506-8355
Zhenlin WangNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Wei LiangKey Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215213, China.
Shi-Ning ZhuNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Zhenda XieNational Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, College of Engineering and Applied Sciences, School of Physics, Research Institute of Superconductor Electronics (RISE) & Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE, Key Laboratory of Intelligent Optical Sensing and Manipulation, Ministry of Education, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The next generation of sensing and communication applications rely on high-frequency microwave generation with low noise. Microwave photonic technology is highly promising; however, its practical applications have so far been limited by the complexity of existing system architectures. Here, we demonstrate an optically locked low-noise photonic microwave oscillator, in which all the optical components are packaged within a small module of 166 mL; low noise microwave generation is achieved at 10.4 GHz with single-sideband phase noise of -54 dBc/Hz at 10 Hz, -141 dBc/Hz at 10 kHz, and -162 dBc/Hz at 10 MHz offset. The above performance arises from a dual-laser self-injection-locking scheme to a single Fabry-Pérot cavity with high Q exceeding 10

Indexed as

low-noise photonic microwave generationmicro Fabry-Pérot cavityoptical frequency divisionoptically locked reference lasersthin-film lithium niobate electro-optic comb

Identifiers

PMID42836135
PMCPMC13637632

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.