Site-control of InAs quantum dots on InP by droplet epitaxy in MOVPE.

Guoliang Zhou, Elisa M Sala, Young In Na, Paul W Fry, Dominic J Hallett, Alistair J Brash, Luke Wilson, Jon Heffernan

Abstract read

In one paragraph

Article in Npj nanophotonics, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

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1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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5 · Who and what money

Authors and funding

8 authors.

Guoliang ZhouDepartment of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Sheffield, UK.

Elisa M SalaDepartment of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Sheffield, UK.

Young In NaDepartment of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Sheffield, UK.

Paul W FryDepartment of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Sheffield, UK.

Dominic J HallettSchool of Mathematical and Physical Sciences, The University of Sheffield, Sheffield, UK.

Alistair J BrashSchool of Mathematical and Physical Sciences, The University of Sheffield, Sheffield, UK.

Luke WilsonSchool of Mathematical and Physical Sciences, The University of Sheffield, Sheffield, UK.

Jon HeffernanDepartment of Electronic and Electrical Engineering, The University of Sheffield, North Campus, Sheffield, UK.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

We demonstrate a novel approach for site-controlled growth of InAs quantum dots on InP substrates emitting at telecom wavelengths, including the C-band, for quantum photonics applications. Regular nanohole arrays were defined by electron-beam lithography and dry etching, followed by InP regrowth. Quantum dots were then formed via droplet epitaxy in MOVPE, in which indium droplets were localised within the nanoholes and subsequently crystallised into site-controlled InAs quantum dots. Micro-photoluminescence measurements on a quantum dot array (2.5 µm pitch over 14 × 14 sites) reveal single-line emission in the telecom bands, with narrow linewidths reaching the instrument resolution, approximately 50 µeV for 60% of the dots and a single dot occupancy for over 80% of the nanoholes in the array.

Indexed as

Materials scienceNanoscience and technologyOptics and photonicsPhysics

Identifiers

PMID42827427

DOI10.1038/s44310-026-00139-z

PMCPMC13626949

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.