ReviewNano convergence2026
Amorphous boron nitride as a low-k dielectric for next-generation BEOL interconnects.
Review in Nano convergence, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
As back-end-of-line (BEOL) scaling pushes porous low-k dielectrics toward their reliability limits, nonporous dielectrics that combine a low dielectric constant (k) with mechanical, thermal, and interfacial robustness are increasingly needed. Among nonporous low-k candidates, amorphous boron nitride (aBN) has attracted attention for advanced BEOL interconnects owing to its low-k value (k ≈ 2) and high mechanical robustness, as reflected by a Young's modulus of ~50 GPa. In this review, we discuss aBN from a BEOL process-integration perspective, focusing on the origin of its low-k behavior, process-dependent structure-property relationships, and its potential roles in BEOL interconnects and hybrid-bonding interfaces. Finally, we discuss remaining issues and future directions for validating aBN as a nonporous low-k dielectric/interface material under BEOL and hybrid-bonding integration.
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