ArticleACS omega2026
Mechanistic Study of Low-Temperature Plasma-Activated InP/Al
Article in ACS omega, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Authors and funding
12 authors.
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Abstract
Silicon-based photonic integrated circuits (PICs) are the core hardware for advanced optoelectronic integration, yet silicon's indirect band gap limits the realization of high-performance on-chip light sources. Heterogeneous integration of direct band gap indium phosphide (InP) on Si thus provides a critical pathway to high-performance PIC with monolithically integrated light sources. However, the interfacial chemical mechanisms governing the strength and reliability of plasma-activated InP/silicon-on-insulator (SOI) direct bonding remain poorly understood. In this work, we demonstrate that high-strength and high-reliability InP/SOI bonding is dominated by two key interfacial factors: preservation of surface reactive hydroxyl groups and suppression of oxide-driven interfacial diffusion on InP. We elucidate how these processes determine bonding interface formation and failure via Water Contact Angle (WCA) measurements, molecular dynamics (MD) simulations, in situ X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). We find that Al
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