Evidence map›Paper›PMID 42816622›Full record

ArticleNature2026

Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride.

Chien-Chih Tseng, Chang-Hsun Huang, Jui-Cheng Kao, Jui-Han Fu, Aowen Li, Ryo Ishikawa, Seong Rae Cho, Chenxi Lei, Kai Qi, Chih-Zong Deng and 13 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

23 authors.

Chien-Chih Tseng *Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
Chang-Hsun Huang *Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan.
Jui-Cheng Kao *Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan.ORCID http://orcid.org/0000-0002-0147-350X
Jui-Han FuDepartment of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan. fuj@g.ecc.u-tokyo.ac.jp.
Aowen LiInstitute of Engineering Innovation, The University of Tokyo, Tokyo, Japan.
Ryo IshikawaInstitute of Engineering Innovation, The University of Tokyo, Tokyo, Japan.ORCID http://orcid.org/0000-0001-5801-0971
Seong Rae ChoDepartment of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
Chenxi LeiDepartment of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
Kai QiDepartment of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
Chih-Zong DengResearch Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.
Po-Yu YangResearch Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan.
Cheng-Tang PanDepartment of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan.ORCID http://orcid.org/0000-0002-5475-011X
Wei-Chun ChenNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan.ORCID http://orcid.org/0000-0002-0731-418X
Ming-Chung WuCenter for Heterogeneous and Innovative Post-Silicon Materials (CHIPs), Chang Gung University, Taoyuan, Taiwan.ORCID http://orcid.org/0000-0002-3584-3871
Fong-Zhi ChenNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan.ORCID http://orcid.org/0000-0002-2046-1715
Yu-Wei LinNational Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan.
Yu-Chieh LoDepartment of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan.ORCID http://orcid.org/0000-0002-7117-9154
Ya-Lun HoResearch Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan.ORCID http://orcid.org/0000-0001-8274-5978
Kosuke NagashioDepartment of Materials Engineering, The University of Tokyo, Tokyo, Japan.ORCID http://orcid.org/0000-0003-1181-8644
Yi-Chia ChouDepartment of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan. ycchou@ntu.edu.tw.ORCID http://orcid.org/0000-0002-7775-2927
Naoya ShibataInstitute of Engineering Innovation, The University of Tokyo, Tokyo, Japan.ORCID http://orcid.org/0000-0003-3548-5952
Chun-Wei PaoResearch Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan. cwpao@gate.sinica.edu.tw.ORCID http://orcid.org/0000-0003-0821-7856
Vincent TungDepartment of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan. vincent@g.ecc.u-tokyo.ac.jp.ORCID http://orcid.org/0000-0003-3230-0932

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

A long-standing bottleneck in realizing two-dimensional (2D) CMOS technology lies in the lack of high-performance p-type semiconductors

Indexed as

Boron CompoundsNitrilesSemiconductorsNitrogenBoron Compoundsboron nitrideNitrilesNitrogen

Identifiers

PMID42816622

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.