Evidence map›Paper›PMID 42811110›Full record

ArticleNature nanotechnology2026

Single-crystal rhombohedral boron nitride wafers for integrated sliding ferroelectric memory.

Jiajie Qi, Tian Gu, Jingfang Tu, Qiu Yang, Quanlin Guo, Liangliang Guo, Pan Wu, Le Chen, Mingkang Zhang, Chong Zhao and 13 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature nanotechnology, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Sliding ferroelectricity scales up.Nature nanotechnology · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

23 authors.

Jiajie Qi *State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-2610-8840
Tian Gu *State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Jingfang Tu *Key Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.ORCID http://orcid.org/0009-0004-3956-7853
Qiu Yang *International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
Quanlin GuoState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0003-2930-6970
Liangliang GuoInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
Pan WuInstitute of Physics, Chinese Academy of Sciences, Beijing, China.
Le ChenState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Mingkang ZhangState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
Chong ZhaoSongshan Lake Materials Laboratory, Dongguan, China.
Enze TianDongguan Institute of Materials Science and Technology, Chinese Academy of Sciences, Dongguan, China.ORCID http://orcid.org/0000-0001-6410-5360
Qianqian YangInstitute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, China.ORCID http://orcid.org/0000-0001-6706-2853
Kanghao XieSchool of Engineering, Westlake University, Hangzhou, China.
Fuwei YangNational Key Laboratory of Advanced MicroNanoManufacture Technology, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-8265-3827
Bai SongNational Key Laboratory of Advanced MicroNanoManufacture Technology, Peking University, Beijing, China.ORCID http://orcid.org/0000-0003-3013-9831
Linxing ZhangInstitute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, China.ORCID http://orcid.org/0000-0002-6767-2771
Xiaorui ZhengSchool of Engineering, Westlake University, Hangzhou, China.ORCID http://orcid.org/0000-0002-6672-1092
Xiaobo LuInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.ORCID http://orcid.org/0000-0003-3149-4755
Enge WangInternational Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.ORCID http://orcid.org/0000-0001-5624-5320
Li WangInstitute of Physics, Chinese Academy of Sciences, Beijing, China. liwang@iphy.ac.cn.ORCID http://orcid.org/0000-0002-0543-5519
Chenguang QiuKey Laboratory for the Physics and Chemistry of Nanodevices and Centre for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China. chenguangqiu@pku.edu.cn.ORCID http://orcid.org/0000-0001-6390-593X
Zhibin ZhangState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China. zhibinzhang@pku.edu.cn.ORCID http://orcid.org/0000-0002-9303-9793
Kaihui LiuState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China. khliu@pku.edu.cn.ORCID http://orcid.org/0000-0002-8781-2495

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12488201National Natural Science Foundation of China (National Science Foundation of China) 92577201, 52402043, U24A20285, 11888101, T2188101National Natural Science Foundation of China (National Science Foundation of China) T2422029, 52272173National Natural Science Foundation of China (National Science Foundation of China) T2588301, 92477201
6 · The paper itself

Abstract

Two-dimensional rhombohedral boron nitride (rBN) has emerged as a promising sliding ferroelectric material for high-density, fast-speed and non-volatile memories. However, the batch production of ferroelectric rBN wafers has remained a critical challenge due to the thermodynamic instability of the rhombohedral phase and the inherent difficulties in maintaining consistent growth kinetics. Here we report a step-templated interfacial epitaxy strategy that enables the reproducible fabrication of 4-inch rBN wafers from nickel-boron films sputtered on the stepped sapphires. Comprehensive structural characterizations across multiple scales confirm the high phase purity and batch-to-batch consistent quality of produced rBN wafers. The intrinsic sliding ferroelectricity is verified in a unified ferroelectric field-effect transistor (FeFET), which exhibits ultrafast switching speed (at the nanosecond scale), high fatigue resistance (>2 × 10

Identifiers

PMID42811110

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.