ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
High-Brightness and Ultra-Long-Lifetime Spin Quantum Dot Light-Emitting Diodes Enabled by Efficient Injection of Spin-Polarized Holes Through a Hybrid Hole Transport Layer.
Fengqi Qiu, Hechun Zhang, Wenbo Liu, Guiming Zhong, Fumin Lu, Yuqi Wang, Fujin Ai, Kai Wang, Dan Wu
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In one paragraphArticle in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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9 authors.
Fengqi Qiu *Guangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China.
Hechun Zhang *Guangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China.
Wenbo LiuGuangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China.
Guiming ZhongGuangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China.
Fumin LuState Key Laboratory of Optical Fiber and Cable Manufacture Technology, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China.ORCID https://orcid.org/0000-0002-5017-4709 Yuqi WangState Key Laboratory of Optical Fiber and Cable Manufacture Technology, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China.ORCID https://orcid.org/0009-0007-1241-6141 Fujin AiCollege of Health Science and Environmental Engineering, Shenzhen Technology University, Shenzhen, China.
Kai WangState Key Laboratory of Optical Fiber and Cable Manufacture Technology, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China.ORCID https://orcid.org/0000-0003-0443-6955 Dan WuGuangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety, College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China.ORCID https://orcid.org/0000-0003-1411-6103 Funding
Guangdong Basic and Applied Basic Research Foundation 2025A1515011655Guangdong Major Project of Basic Research 2025B0303000002Guangdong Provincial Key Laboratory of Low-Altitude Intelligent Perception and Navigation Safety 2026B1201010001National Natural Science Foundation of China 62122034National Natural Science Foundation of China 62404091National Natural Science Foundation of China 62475171Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting SYSPG20241211173725009Shenzhen Science and Technology Program 20231128135041001Young Top Talents under Guangdong Special Support Program 2024TQ08x142
6 · The paper itselfAbstract
Spin-polarized quantum dot light-emitting diodes (spin-QLEDs) offer a package solution for advanced photonic applications, such as quantum information processing. However, the performance of these devices is threatened by integration of chiral layers due to greatly compromised interfacial hole transport and deteriorate film morphology. In this work, a hybrid hole transport layer (HTL) engineering strategy is proposed to simultaneously tackle the two key issues. On one hand, enhanced surface hydrophilicity of the HTL enables the growth of a high-quality chiral perovskite layer as a spin filter. On the other hand, tri-channel hole transport mechanism is first unraveled theoretically and experimentally to realize high-mobility pathways, stepwise injection, and bypass the resistive limitations of traditional HTL. The resulting spin-QLEDs demonstrated an ultralong T
Indexed as
chiral perovskitecircularly polarized electroluminescencecolloidal quantum dotshybrid hole transport layerSpin light‐emitting diodes
Identifiers
PMID42801712
PMCPMC13616287
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