Evidence map›Paper›PMID 42796181›Full record

ArticleMicromachines2026

A High-Sensitivity MEMS Pressure Sensor with a Narrow Cross-Beam Membrane-Short Beam Structure.

Tao Wang, Zibang Xiao, Peicang Chen, Meng Nie, Zhen Yan, Shijie Deng, Jing Chen, Xiaolin Wang, Jingquan Liu

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
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0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Tao WangNational Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0009-0006-5257-3793
Zibang XiaoKey Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.
Peicang ChenWuxi Zhongwei Microchips Co., Ltd., Wuxi 210093, China.
Meng NieKey Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.ORCID 0000-0002-3478-8508
Zhen YanKey Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.
Shijie DengKey Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.
Jing ChenNational Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China.
Xiaolin WangNational Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0001-9510-4045
Jingquan LiuNational Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, China.

Funding

Basic Research Program of the Jiangsu Natural Science Foundation BK20243023Joint Project of the Yangtze River Delta Community of Sci-tech Innovation 2023CSJGG0400
6 · The paper itself

Abstract

To address the difficulty of balancing sensitivity and nonlinearity in MEMS piezoresistive pressure sensors, this study proposes an MEMS piezoresistive pressure sensor with a narrow cross-beam membrane-short beam structure. The structure introduces a tapered design at the ends of a conventional cross beam and incorporates short beams to enhance stress concentration in the sensitive regions, thereby improving output sensitivity while maintaining low nonlinearity. Finite-element analysis was performed to evaluate the stress distribution and deflection characteristics and to compare the proposed structure with conventional cross-beam and other diaphragm structures. Under identical overall dimensions, the proposed structure improves sensitivity by 61% relative to the conventional cross beam. Based on the finite-element results, multivariate fitting models for surface stress and deflection were established, and nonlinear optimization was used to determine the constrained optimal geometrical parameters within the validated design domain. Simulation results indicate that, over a pressure range of 0-1 kPa, the proposed sensor achieves a sensitivity of 12.23 mV/V/kPa and a maximum nonlinearity of 0.196% FSS, demonstrating favorable performance for micropressure detection.

Indexed as

finite-element methodmicroelectromechanical systemsnonlinear optimizationpressure sensorsensitivity

Identifiers

PMID42796181
PMCPMC13609132

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.