Evidence map›Paper›PMID 42796112›Full record

ArticleMicromachines2026

Design and Electrical Performance Simulation of a Novel 3D Silicon Detector with Interleaved Trench Electrodes.

Xuyang Song, Tao Long, Jun Zhao, Chunxiang Ni, Xinqing Li, Manwen Liu, Kun Wang, Jiahao Fu, Taiping Lu, Zheng Li

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Xuyang SongShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.
Tao LongShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.ORCID 0009-0006-4026-8425
Jun ZhaoShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.ORCID 0009-0008-1905-2253
Chunxiang NiShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.
Xinqing LiEngineering Research Center of Photo Detector Special Chip in Universities of Shandong, Ludong University, Yantai 264025, China.
Manwen LiuInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.ORCID 0000-0001-7654-8548
Kun WangShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.
Jiahao FuShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.
Taiping LuShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.
Zheng LiShandong Provincial Engineering Research Center for Optoelectronic Sensing Materials and Device Micro-Nano Manufacturing, School of Integrated Circuits, Ludong University, Yantai 264025, China.

Funding

Shandong Provincial Natural Science Foundation ZR2026LWN004Shandong Provincial Natural Science Foundation ZR2026LWN005Shandong Provincial Natural Science Foundation ZR2026LWN008
6 · The paper itself

Abstract

To address the limitations of traditional trench electrode silicon detectors, such as charge collection dead zones and non-uniform electric fields, this paper proposes a novel 3D silicon detector based on an interleaved trench electrode structure. By constructing interleaved N-type and P-type heavily doped trenches on a lightly doped N-type substrate, enhanced uniformity and depth profile optimization of the electric field distribution are achieved. Moreover, 3D numerical simulations based on TCAD demonstrate that the proposed structure provides a uniform, planar-like electric field distribution; reduces low-field regions; and enables fast carrier collection with a low full-depletion voltage. The results provide a theoretical basis and design reference for the development of novel 3D radiation detectors with low depletion voltages, fast charge collection, and favorable radiation response characteristics.

Indexed as

3D silicon detectorcharge collection efficiencyinterleaved trench electrodelow-field region reductionTCAD simulation

Identifiers

PMID42796112
PMCPMC13609453

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.