Evidence map›Paper›PMID 42786153›Full record

ArticleNature communications2026

All electrical sub-nanosecond field-free switching of perpendicular magnetization with high magnetic field immunity.

Jiyu Shen, Jun Cheng, Yulun Zeng, Zeyuan Zhang, Man Yang, Camelia Florina Florica, Heng Niu, Tongzhou Ji, Zhiyuan Cheng, Xi Yang and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Jiyu Shen *Department of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Jun Cheng *Department of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.ORCID http://orcid.org/0000-0001-5925-1881
Yulun Zeng *Department of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Zeyuan ZhangDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Man YangDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.ORCID http://orcid.org/0000-0003-0336-374X
Camelia Florina FloricaPhysical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.ORCID http://orcid.org/0009-0001-9983-9572
Heng NiuDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.ORCID http://orcid.org/0000-0001-5321-1387
Tongzhou JiDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Zhiyuan ChengDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Xi YangDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Longqian YuDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Mengxue JiangDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Junwei MaDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.
Liang SunDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.ORCID http://orcid.org/0000-0001-7825-9256
Gong ChenDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China.ORCID http://orcid.org/0000-0002-5102-7487
Xixiang ZhangPhysical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.ORCID http://orcid.org/0000-0002-3478-6414
Bingfeng MiaoDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China. bfmiao@nju.edu.cn.ORCID http://orcid.org/0000-0002-3089-0695
Haifeng DingDepartment of Physics, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, PR China. hfding@nju.edu.cn.ORCID http://orcid.org/0000-0001-7524-0779

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Spin-orbit torque magnetic random-access memory is a promising next-generation non-volatile memory technology featuring low power consumption, rapid operation, and high endurance. Conventional spin-orbit torque-induced deterministic perpendicular magnetization switching, however, typically requires the assistance of an external magnetic field. While multiple field-free switching strategies have been demonstrated, most suffer from significant limitations. Here, we present a straightforward and reliable approach for field-free switching of perpendicular magnetization utilizing two orthogonal electrical currents. The method employs only conventional heavy metals as spin current sources and enables seamless integration into existing manufacturing lines as it is fully compatible with standard fabrication processes for commercialized spin-transfer torque magnetic random-access memory. Notably, the approach also achieves ultrafast magnetization switching with robust immunity against external magnetic fields along all directions.

Identifiers

PMID42786153
PMCPMC13612405

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.