Evidence map›Paper›PMID 42778623›Full record

ArticleNature communications2026

Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.

Jialong Wang, Yihao Zheng, Qingsheng Zeng, Yuhang Jing, You Peng, Tong Zhou, Li Yin, Xinyan Wu, Chenxi Zhang, Yujin Cheng and 10 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

20 authors.

Jialong Wang *School of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Yihao Zheng *Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0009-0008-4191-1771
Qingsheng ZengSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, People's Republic of China.
Yuhang JingSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
You PengSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Tong ZhouSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Li YinSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Xinyan WuSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, People's Republic of China.
Chenxi ZhangKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, People's Republic of China.
Yujin ChengSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Haoxuan DingSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Xiyao WangSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.
Wei WeiVacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, People's Republic of China.
Li LinSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0002-3626-0643
Jinlong DuElectron Microscopy Laboratory, School of Physics, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0003-2776-0950
Qingqing JiSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, People's Republic of China.ORCID http://orcid.org/0000-0001-5526-3746
Jing XiaKey Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, People's Republic of China. xiajing@mail.ipc.ac.cn.ORCID http://orcid.org/0000-0001-6092-1344
Chenguang QiuKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, People's Republic of China. chenguangqiu@pku.edu.cn.ORCID http://orcid.org/0000-0001-6390-593X
Lian-Mao PengKey Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, People's Republic of China.ORCID http://orcid.org/0000-0003-0754-074X
Yanfeng ZhangSchool of Materials Science and Engineering, Peking University, Beijing, People's Republic of China. yanfengzhang@pku.edu.cn.ORCID http://orcid.org/0000-0003-1319-3270

Funding

China Postdoctoral Science Foundation 2025M780008National Natural Science Foundation of China (National Science Foundation of China) 92477204, T2188101National Natural Science Foundation of China (National Science Foundation of China) T2588301
6 · The paper itself

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) single-crystal wafers have been envisioned as promising channel materials to drive semiconductor technology down to the atomic limit. Although several efforts have been made, wafer-scale single crystal growth with high robustness and efficiency remains challenging. Here, we design a homo-metal-element (W/Mo and Al) surface modification strategy of commercial C/M sapphire inducing a low-symmetry modification layer. This design enables the robust epitaxial growth of 2-inch scale monolayer WS

Identifiers

PMID42778623
PMCPMC13601580

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.