Evidence map›Paper›PMID 42775273›Full record

ArticleNational science review2026

Filling faults and vacancy swap occupation in half-Heusler compounds.

Shen Han, Zhongkang Han, Yangjian Lin, Ting Lin, Tianqi Deng, Chenguang Fu, Xiaojuan Hu, Fu Lv, Qizhu Li, Ziheng Gao and 9 more

Abstract read
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Article in National science review, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

19 authors.

Shen HanState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Zhongkang HanState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Yangjian LinInstitutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Ting LinBeijing National Center for Electron Microscopy and Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
Tianqi DengState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Chenguang FuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Xiaojuan HuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Fu LvState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Qizhu LiInstitutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Ziheng GaoState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Haonan ShengState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Yi HuangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Mengzhao ChenState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Pengfei NanInstitutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Yuhui HuangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.
Binghui GeInstitutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Lin GuBeijing National Center for Electron Microscopy and Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
G Jeffrey SnyderDepartment of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA.ORCID https://orcid.org/0000-0003-1414-8682
Tiejun ZhuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China.ORCID https://orcid.org/0000-0002-3868-0633

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Defects play a vital role in understanding and elucidating the structure-property relationship in materials science. Here, we report the existence of a new kind of planar defect, 'filling fault', in half-Heusler (HH) compounds-a structurally and functionally diverse family of materials. The ideal HH structure is composed of three occupied and one vacant sublattices. The two-dimensional filling fault layer tends to form with the originally vacant 4d sites occupied, fully or partly, which results in a vacancy swap occupation between the 4c and 4d sublattices. It is found that the filling faults are apt to form fully in Ni-based ZrNiSn and ScNiSb, moderately in Co-based TiCoSb and hardly in Fe-based NbFeSb and VFeSb. The unique defect configurations and the formation rule clarify the long-standing structure puzzles in HH compounds. Furthermore, we find that the filling faults and the associated vacancy swap occupation can significantly enhance the piezoelectricity and change the temperature dependence of electrical conductivity. These results deepen the understanding of precise crystallographic structures and defect-property relationships in solids, and facilitate the design of advanced materials and functional devices.

Indexed as

defect–property relationshipfilling faulthalf-Heusler compoundspiezoelectricity

Identifiers

PMID42775273
PMCPMC13596055

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