Evidence map›Paper›PMID 42769635›Full record

ArticleScience and technology of advanced materials2026

High-quality Janus MoSSe and WSSe monolayers enabled by hBN-supported chalcogen substitution.

Tomoya Ogawa, Wenjin Zhang, Takahiko Endo, Yuta Sawai, Dingkun Bi, Tianyishan Sun, Hiroto Ogura, Kenji Watanabe, Takashi Taniguchi, Toshiaki Kato and 1 more

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Article in Science and technology of advanced materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

11 authors.

Tomoya OgawaDepartment of Physics, Tokyo Metropolitan University, Hachioji, Japan.
Wenjin ZhangResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
Takahiko EndoResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
Yuta SawaiDepartment of Physics, Tokyo Metropolitan University, Hachioji, Japan.
Dingkun BiAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai, Japan.
Tianyishan SunAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai, Japan.
Hiroto OguraAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai, Japan.
Kenji WatanabeResearch Center for Electronic and Optical Materials, NIMS, Tsukuba, Japan.
Takashi TaniguchiResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.
Toshiaki KatoAdvanced Institute for Materials Research (AIMR), Tohoku University, Sendai, Japan.
Yasumitsu MiyataResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Japan.ORCID https://orcid.org/0000-0002-9733-5119

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Janus transition metal dichalcogenide (TMD) monolayers offer distinctive physical properties and device applications because their broken out-of-plane mirror symmetry induces an intrinsic out-of-plane dipole. High crystal quality is essential for accessing their intrinsic excitonic physics, yet improving Janus TMD quality remains challenging due to structural degradation and strain introduced during chalcogen substitution. To address this challenge, we develop a hexagonal boron nitride (hBN)-supported chalcogen substitution process that yields crack-free Janus TMD monolayers with improved optical uniformity. MoSe

Indexed as

2D materialschemical vapor depositionJanusMoSSeoptical propertiestransition metal dichalcogenidesWSSe

Identifiers

PMID42769635
PMCPMC13591999

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