Evidence map›Paper›PMID 42754609›Full record

ArticleNature communications2026

Twist degree of freedom activated by pressure-driven interlayer engineering in spiral WS

Penghong Ci, Muhua Sun, Yabin Chen, Yoonsoo Rho, Yuzhou Zhao, Kaiyao Xin, Zifeng Mai, Shanyu Liang, Zhongjie Wang, Jiangbin Wu and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Penghong Ci *State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. ci@semi.ac.cn.ORCID http://orcid.org/0000-0001-5949-6854
Muhua Sun *Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China.
Yabin Chen *Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.ORCID http://orcid.org/0000-0002-5180-2009
Yoonsoo Rho *Department of Mechanical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.ORCID http://orcid.org/0000-0003-2870-5064
Yuzhou ZhaoSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, China.ORCID http://orcid.org/0000-0002-1610-8273
Kaiyao XinState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0009-0001-9834-9619
Zifeng MaiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Shanyu LiangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Zhongjie WangState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
Jiangbin WuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-8751-7082
Hao HongState Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.ORCID http://orcid.org/0000-0002-0641-1340
Zhongming WeiState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0002-6237-0993
Costas P GrigoropoulosDepartment of Mechanical Engineering, University of California, Berkeley, CA, USA.ORCID http://orcid.org/0000-0002-8505-4037
Yue-Yang LiuState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. yueyangliu@semi.ac.cn.ORCID http://orcid.org/0000-0001-6508-4215
Ping-Heng TanState Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.ORCID http://orcid.org/0000-0001-6575-1516
Junqiao WuDepartment of Materials Science and Engineering, University of California, Berkeley, CA, USA. wuj@berkeley.edu.ORCID http://orcid.org/0000-0002-1498-0148

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Precise twist-angle control in van der Waals (vdW) moiré superlattices enables twistronic tuning of interfacial responses and emergent quantum states, but it remains unclear how atomic registry in three-dimensional stacks is linked to interlayer coupling and whether it can produce an internal twist degree of freedom without external torque. Here, we show that, via interlayer engineering, screw-dislocation-driven multilayer spiral WS

Identifiers

PMID42754609
PMCPMC13586321

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.