Evidence map›Paper›PMID 42749738›Full record

ArticleNature communications2026

Dual-ferroelectric stacked high-performance field-effect transistor.

Peng Wang, Biyi Jiang, Wuhong Xue, Jingyuan Qu, Wei Zhao, Tianqi Liu, Yan Han, Rongkai Jiao, Ruilong Yang, Feichi Zhou and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Peng Wang *Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Biyi Jiang *School of Microelectronics, Southern University of Science and Technology, Shenzhen, China.
Wuhong XueKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China. xuewuhong@sxnu.edu.cn.ORCID http://orcid.org/0000-0003-2543-8626
Jingyuan QuKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Wei ZhaoKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Tianqi LiuKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Yan HanKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Rongkai JiaoKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Ruilong YangKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Feichi ZhouSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, China. zhoufc@sustech.edu.cn.ORCID http://orcid.org/0000-0001-7756-1082
Xiaohong XuKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China. xuxh@sxnu.edu.cn.ORCID http://orcid.org/0000-0001-7588-4793

Funding

National Natural Science Foundation of China (National Science Foundation of China) 12241403National Natural Science Foundation of China (National Science Foundation of China) 52371245
6 · The paper itself

Abstract

Ferroelectric transistors have the potential to meet the computing demands of data-intensive applications such as artificial intelligence. However, the existing research lacks functional reconfigurability and multi-task parallel processing capability. Here, we report a dual-ferroelectric stacked transistor that operates through opto-electric dual-mode induced ferroelectric polarization reversal, which features configurable multi-mode functionality encompassing electronic storage, multi-level optical memory, and visual functional emulation. The dual-ferroelectric architecture significantly enhances non-volatile memory performances, demonstrating an ultra-high current on/off ratio, ultra-low dark current and energy consumption, over 8-bit conductance states, multiple analog states and large dynamic range. Furthermore, the simulated artificial visual system enables multi-task parallel processing of static and motion mixed-color information. This work demonstrates that dual-ferroelectric stacked architecture holds potential in parallel processing of multidimensional information.

Identifiers

PMID42749738
PMCPMC13582962

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.