Evidence map›Paper›PMID 42741662›Full record

ArticleRSC advances2026

Hybrid density functional study of strain-engineered III-V semiconductors and monolayer InSe.

Md Tanvir Ahmed, Maahi Sabah, Md Saiful Islam, Mahabuba Rahman Shanta, Md Hafijur Rahman, Md Ashraf Ali, Ruma Parvin, Saleh Hasan Naqib, Md Shahajan Ali

Abstract read
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Article in RSC advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

9 authors.

Md Tanvir AhmedDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0009-0008-1497-1509
Maahi SabahDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0009-0000-7944-4357
Md Saiful IslamDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0009-0004-2214-4379
Mahabuba Rahman ShantaDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0009-0003-6302-1044
Md Hafijur RahmanDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0000-0003-0636-6540
Md Ashraf AliDepartment of Physics, Chittagong University of Engineering and Technology Chattogram-4349 Bangladesh.ORCID https://orcid.org/0000-0003-4957-2192
Ruma ParvinDepartment of Physics, University of Rajshahi Rajshahi-6205 Bangladesh.ORCID https://orcid.org/0009-0007-5819-1670
Saleh Hasan NaqibDepartment of Physics, University of Rajshahi Rajshahi-6205 Bangladesh.ORCID https://orcid.org/0000-0003-4462-2189
Md Shahajan AliDepartment of Physics, Pabna University of Science and Technology Pabna-6600 Bangladesh msali@pust.ac.bd.ORCID https://orcid.org/0000-0002-4200-0362

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Accurate prediction of strain-dependent semiconductor properties requires reliable exchange-correlation treatments and a unified understanding of bulk and two-dimensional materials. Here, we investigate strain-engineered bulk AlP, AlSb, and monolayer InSe under biaxial strains from -6% to +6% using the Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE06) functionals. HSE06 significantly improves structural accuracy, reducing the mean absolute deviation in lattice parameters from 1.47% to 0.39%. Biaxial strain lowers the symmetry of bulk AlP and AlSb from cubic zinc blende to tetragonal structures, whereas monolayer InSe retains its hexagonal symmetry. Phonon spectra and

Identifiers

PMID42741662
PMCPMC13573631

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