Flexible h-BN/GaN Heterostructure Thin-Film Piezoelectric Sensors for Harsh Environments.

Harsh-environment pressure sensing requires piezoelectric materials that can simultaneously withstand elevated temperature, mechanical loading, and structural degradation. GaN is a promising lead-free piezoelectric semiconductor owing to its wide bandgap, high thermal stability, and non-centrosymmetric wurtzite structure. However, its piezoelectric output can be significantly affected by free-carrier compensation in unintentionally n-type GaN. Here, we report a flexible all-inorganic piezoelectric pressure sensor based on a directly grown h-BN/GaN heterostructure thin film. The h-BN layer was deposited on GaN/Si by plasma-enhanced chemical vapor deposition, followed by backside Si removal, electrode deposition, and transfer onto a flexible Cu foil substrate. Structural characterizations confirmed the formation of a compact h-BN/GaN interface with clear lattice fringes, preferential out-of-plane orientation, and characteristic Raman signatures of both h-BN and GaN. Compared with the flexible GaN/Cu reference, the h-BN/GaN device exhibits modified interfacial electrical transport behavior, enhanced voltage and current-density outputs, and prolonged transient voltage retention. Finite-element simulations reveal modified electrostatic potential distribution after h-BN integration, while electrical and interfacial characterizations suggest electronic structure modulation and reduced carrier compensation effects at the heterointerface. Raman optothermal analysis indicates an improved relative/local thermal response of the h-BN/GaN device under identical optical excitation conditions, supporting its enhanced thermal robustness. Under 200 psi at 400 °C, the h-BN/GaN sensor maintains an output voltage of approximately 27.65 mV, about 2.32 times that of the GaN reference. This work demonstrates an interfacial engineering strategy based on two-dimensional h-BN integration for constructing flexible, thermally robust, and high-output piezoelectric sensors for harsh-environment monitoring.