ArticleNature communications2026
Solution-phase transition zones govern crystallographic perfection in metal halide perovskite single crystals.
Zhongyi Lin, Lei Li, Tanhao Zhang, Hengyu Zhang, Fuyi Zhou, Lixiang Wang, Jingyi Sun, Yanjun Fang, Pok Fung Chan, Hengkai Zhang and 3 more
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13 authors.
Zhongyi LinState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0009-0003-6108-3284 Lei LiState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.
Tanhao ZhangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.
Hengyu ZhangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0009-0007-7894-019X Fuyi ZhouState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0001-8275-2932 Lixiang WangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.
Jingyi SunState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.
Yanjun FangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China.ORCID http://orcid.org/0000-0003-4401-2313 Pok Fung ChanDepartment of Physics, The Chinese University of Hong Kong, New Territories, China.
Hengkai ZhangDepartment of Physics, The Chinese University of Hong Kong, New Territories, China.
Deren YangState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China. mseyang@zju.edu.cn.ORCID http://orcid.org/0000-0002-1745-2105 Zhenyi NiState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, and Zhejiang Provincial Key Laboratory of Optoelectronic Functional Materials and Devices, Zhejiang University, Hangzhou, China. zyni@zju.edu.cn.ORCID http://orcid.org/0000-0002-8379-9182 Funding
National Natural Science Foundation of China (National Science Foundation of China) 52303254National Natural Science Foundation of China (National Science Foundation of China) 62474156Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation) LBMHZ25F050001
6 · The paper itselfAbstract
Despite rapid progress in solution-grown metal halide perovskite single crystals for optoelectronic applications, further enhancement of their intrinsic crystallographic quality through solution engineering remains challenging. In particular, the fundamental links between precursor solution properties and crystal quality, as well as a universal mechanism governing crystallization from solution, remains poorly understood. Here, using in-situ microscopic spectroscopy, we identify key solution properties of viscosity, concentration, coordination number and growing temperature as critical determinants of crystal quality through their modulation of solution-phase transition zones, which are directly observed experimentally located 10 - 60 μm away from the crystal-solution interface. We reveal a direct correlation between crystal quality, quantified by the carrier mobility-lifetime product, and the width of the transition zone, providing a clear guideline for improving crystallographic quality by widening this zone. As a result, FAPbBr
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PMID42736287
PMCPMC13575151
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