Evidence map›Paper›PMID 42733241›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

A Very-High Frequency Solution-Processed Organic Field-Effect Transistor With Improved Voltage-Normalized Frequency of Transition.

Tommaso Losi, Kyle van Oosterhout, Martino Cambiaggio, Martin Heeney, Qiao He, Hans Kleemann, Alessandro Luzio, Eugenio Cantatore, Mario Caironi

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Tommaso LosiCenter for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy.
Kyle van OosterhoutDepartment of Electrical Engineering, Eindhoven University of Technology, Eindhoven, The Netherlands.ORCID https://orcid.org/0000-0001-7469-9182
Martino CambiaggioCenter for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy.ORCID https://orcid.org/0009-0002-1891-5658
Martin HeeneyDivision of Physical Sciences & Engineering, Chemistry Program, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.ORCID https://orcid.org/0000-0001-6879-5020
Qiao HeCollege of Education Sciences, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou, China.ORCID https://orcid.org/0000-0002-9383-9387
Hans KleemannDresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany.ORCID https://orcid.org/0000-0002-9773-6676
Alessandro LuzioCenter for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy.ORCID https://orcid.org/0000-0003-1857-1613
Eugenio CantatoreDepartment of Electrical Engineering, Eindhoven University of Technology, Eindhoven, The Netherlands.ORCID https://orcid.org/0000-0002-9646-7232
Mario CaironiCenter for Nano Science and Technology, Istituto Italiano di Tecnologia, Milano, Italy.ORCID https://orcid.org/0000-0002-0442-4439

Funding

European Union under the Horizon Europe 101161032King Abdullah University of Science and Technology (KAUST) ORFS-CRG12-2024-6443Open Discovery Ideas Channel I-2023-07677
6 · The paper itself

Abstract

Achieving very-high (VHF) and ultra-high frequency (UHF) operation in organic field-effect transistors (OFETs) would expand their field of application to wireless communication. Such vision remains a major challenge, with OFETs mostly limited to High-Frequency bandwidth (3 - 30 MHz) due to intrinsic limitations, such as contact resistance and charge mobility, and fabrication-related parasitism, especially when adopting solution-based approaches. Here, we report on p-type OFETs exhibiting a frequency of transition (f

Indexed as

direct‐writingfrequency of transitionorganic blend semiconductororganic electronicsvery‐high frequency transistors

Identifiers

PMID42733241
PMCPMC13572828

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.