Evidence map›Paper›PMID 42726579›Full record

ArticleNanomaterials (Basel, Switzerland)2026

Effect of TiN Interfacial Layer on the Microstructure and Optoelectronic Properties of AZO/Ag/AZO Multilayer Films.

Haijuan Mei, Yi Yu, Libin Gan, Rui Wang, Zhaohui Guo, Qiuguo Li, Hongping Liang, Huojuan Ye, Zhenting Zhao, Weiping Gong

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Haijuan MeiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0003-3324-7870
Yi YuGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Libin GanGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Rui WangGuangxi Key Laboratory of Special Engineering Equipment and Control, Guilin University of Aerospace Technology, Guilin 541004, China.
Zhaohui GuoGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Qiuguo LiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0002-5014-8543
Hongping LiangGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0001-6369-7683
Huojuan YeGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Zhenting ZhaoGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Weiping GongGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0002-3761-2671

Funding

Characteristic Innovation Project of Guangdong Provincial Universities 2024KTSCX087Guangdong Basic and Applied Basic Research Foundation 2025A1515140254Guangdong-Hui Joint Fund Regional Cultivation Project 2023A1515140074Guangxi Natural Science Foundation 2026GXNSFHA00640118Innovative Research Team of Guangdong Province and Huizhou University IRTHZUKey Areas Research Program for Universities of Guangdong Province 2025ZDZX1036National Natural Science Foundation of China 52405189University-Level College Students Innovation Training Program CX2026084
6 · The paper itself

Abstract

To investigate the effect of the TiN interfacial layer on the microstructure and optoelectronic properties of AZO/Ag/AZO multilayer films, four configurations, namely AAA, ATAA, AATA, and ATATA, were deposited on the glass substrates by magnetron sputtering. All the films exhibited a preferential ZnO (002) orientation. When TiN was located above the Ag layer, the ATAA film preserved a pronounced Ag (111) diffraction feature and exhibited the best overall optoelectronic performance, the average transmittance increased from 78.4% for AAA to 85.9%, the resistivity decreased from 7.2 × 10

Indexed as

AZO/Ag/AZOmicrostructureoptoelectronic propertiesTiN

Identifiers

PMID42726579
PMCPMC13567052

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.