Analytical Investigation of Non-Local Optoelectronic Photo-Thermoelastic Response in Fiber-Reinforced Anisotropic Silicon Using an Eigenvalue Framework.

This study aims to investigate the influence of non-local elasticity on the coupled optoelectronic photo-thermoelastic response of an anisotropic fiber-reinforced silicon half-space subjected to optical carrier excitation. A coupled analytical model is developed by incorporating non-local elasticity into a fiber-reinforced anisotropic semiconductor framework, where the thermal, carrier-density, displacement, and stress fields are fully coupled. After introducing the appropriate non-dimensional variables, the governing equations are transformed using the normal-mode technique into a system of ordinary differential equations and solved analytically through an eigenvalue-based vector-matrix approach. The novelty of the present work lies in examining the influence of the non-local parameter within a fiber-reinforced anisotropic semiconductor and performing a systematic comparison between fiber-reinforced and non-reinforced configurations under identical photothermal loading conditions. The numerical results demonstrate that increasing the non-local parameter produces pronounced changes in the mechanical response, including displacement amplitudes, stress distributions, and wave attenuation characteristics, whereas the temperature and carrier-density fields exhibit only slight variations within the investigated parameter range. Fiber reinforcement further influences the mechanical response by enhancing the structural stability and directional stiffness of the medium. The proposed analytical framework provides physical insight into the coupled effects of nonlocality and fiber reinforcement, with potential relevance to the analysis and design of semiconductor devices, optoelectronic and photonic structures, MEMS/NEMS, and smart fiber-reinforced composite materials operating under coupled thermo-mechanical and optical excitations.