High Removal Rates and Atomically Smooth Surfaces Are Achieved on Silicon Wafers Using the New SiO

Maokui Wang, Weilong He, Kai Feng, Rui Ye, Yunci Wang, Weiyi Guan, Facheng Qiu, Xing Fan, Renlong Liu

Abstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Maokui WangCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Weilong HeCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Kai FengCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Rui YeCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Yunci WangCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Weiyi GuanCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.

Facheng QiuCollege of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054, China.

Xing FanCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.ORCID 0000-0002-8663-2599

Renlong LiuCollege of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China.ORCID 0009-0004-3716-2123

Funding

Hubei Sinophorus Electronic Materials Co., Ltd, H20260580

6 · The paper itself

Abstract

The relentless miniaturization of integrated circuits demands chemical mechanical polishing (CMP) technologies that achieve both high material removal rates (MRR) and atomic-scale surface quality. Herein, we synthesize sub-100 nm SiO

Indexed as

atomic-level surface roughnesschemical mechanical polishing (CMP)composite abrasivessilicon wafer planarizationSiO2@ZrO2

Identifiers

PMID42726540

DOI10.3390/nano16171064

PMCPMC13567100

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.