Evidence map›Paper›PMID 42726523›Full record

ArticleNanomaterials (Basel, Switzerland)2026

Optoelectronic Properties and Temporal Stability of AZO/Al/Cu/Al/AZO Multilayer Films.

Haijuan Mei, Libin Gan, Rui Wang, Jianchu Liang, Yi Yu, Yuhao Luo, Jiayu Chen, Shanshan Chen, Cihong Lin, Qiuguo Li and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

What it found

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

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3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

11 authors.

Haijuan MeiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0003-3324-7870
Libin GanGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Rui WangGuangxi Key Laboratory of Special Engineering Equipment and Control, Guilin University of Aerospace Technology, Guilin 541004, China.
Jianchu LiangGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Yi YuGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Yuhao LuoGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Jiayu ChenGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Shanshan ChenGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.
Cihong LinDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518000, China.
Qiuguo LiGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0002-5014-8543
Weiping GongGuangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China.ORCID 0000-0002-3761-2671

Funding

Characteristic Innovation Project of Guangdong Provincial Universities 2024KTSCX087Guangdong-Hui Joint Fund Regional Cultivation Project 2023A1515140074Guangxi Natural Science Foundation 2026GXNSFHA00640118Huizhou University IRTHZUNational Natural Science Foundation of China 52405189Special Projects in Key Areas of Guangdong Provincial Department of Education 2023ZDZX1026University-Level College Students Innovation Training Program CX2026084
6 · The paper itself

Abstract

To investigate how the position and thickness of ultrathin Al interfacial layers regulate the optoelectronic properties and temporal stability of AZO/Cu/AZO multilayer films, AZO/Cu/AZO (ACA), AZO/Al/Cu/AZO (AACA), and AZO/Al/Cu/Al/AZO (AACAA) multilayers were deposited on glass substrates by magnetron sputtering. For clarity, the stack notation is given from the film surface toward the substrate. AACA contains a 1 nm Al interfacial layer above Cu, whereas AACAA-1 and AACAA-2 contain Al layers on both sides of Cu with top/bottom thicknesses of 1/1 and 2/1 nm, respectively. The effects of Al layer insertion position and thickness on the microstructure, optoelectronic properties, and temporal stability were systematically investigated. The ACA and AACA films exhibited ZnO and Cu phases with preferred ZnO (002) and Cu (111) diffraction, respectively. The AACA film showed the best initial optoelectronic performance, with the average transmittance increasing from 75.9% to 85.7% and the sheet resistance decreasing from 18.5 to 6.7 Ω/sq, yielding a figure of merit (

Indexed as

AZO/Cu/AZOinterfacial modulationoptoelectronic propertiestemporal stability

Identifiers

PMID42726523
PMCPMC13567495

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