Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
2 · The registry
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
5 · Who and what money
Authors and funding
14 authors.
Jiarui WangNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.
Yu-Ting HuangState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, College of Integrated Circuits, Jilin University, Changchun, China.
Yuhao LiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.ORCID http://orcid.org/0000-0003-4469-5468
Meiyu WangCenter for Shared Scientific Research Facilities, Nanjing University, Nanjing, Jiangsu, China.
Shengsheng LinNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.
Yuanhao WeiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.
Jingjing ChangAdvanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an, Shanxi, China.ORCID http://orcid.org/0000-0003-3773-182X
Yun LiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.ORCID http://orcid.org/0000-0003-1753-7317
Fengqiu WangNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.ORCID http://orcid.org/0000-0001-9823-5788
Songlin LiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China.ORCID http://orcid.org/0000-0002-3995-9580
Xian-Bin LiState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, College of Integrated Circuits, Jilin University, Changchun, China.ORCID http://orcid.org/0000-0002-0046-2016
Xinran WangNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China. xrwang@nju.edu.cn.ORCID http://orcid.org/0000-0002-3975-1667
Yi ShiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China. yshi@nju.edu.cn.ORCID http://orcid.org/0000-0002-1082-0315
Zaiyao FeiNational Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu, China. zyfei@nju.edu.cn.ORCID http://orcid.org/0000-0002-5433-2778
Funding
National Natural Science Foundation of China (National Science Foundation of China) 12404217
6 · The paper itself
Abstract
Resistive switching is the basis of many emerging memory technologies. However, its operation at cryogenic temperatures remains scarce, and it generally lacks compatibility with optical control and in-situ electrical programmability. Here, we report the discovery of a photo-activated digital resistive switching effect in a cryogenic photomemory based on α-In
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.
Photo-activated digital resistive switching in a cryogenic photomemory. · full record | OpenQuestion