Evidence map›Paper›PMID 42653628›Full record

ArticleMicromachines2026

Efficient Automatic Design of a 2D TMD FET via Machine Learning-Assisted TCAD Simulation.

Na Shi, Zi-Jun Wei, Tong Wu

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Na ShiSchool of Microelectronics, Shanghai University, Shanghai 200444, China.ORCID 0009-0002-5055-6843
Zi-Jun WeiSchool of Microelectronics, Shanghai University, Shanghai 200444, China.
Tong WuSchool of Microelectronics, Shanghai University, Shanghai 200444, China.ORCID 0000-0001-6018-0283

Funding

National Natural Science Foundation of China 62504152Shanghai Science and Technology Commission 24142200200
6 · The paper itself

Abstract

As the scaling of silicon-based devices approaches physical limits, two-dimensional transition-metal dichalcogenide field-effect transistors (2D TMD FETs) have emerged as promising candidates for logic devices in the post-Moore era. However, their design optimization relies heavily on computationally intensive TCAD simulations, thereby limiting efficient exploration of multidimensional parameter spaces. This paper proposes an efficient automated design framework for 2D TMD FETs under small-sample conditions and validates it using a monolayer MoS

Indexed as

2D TMD FETinverse designmachine learningsmall-sample modelingTCAD simulation

Identifiers

PMID42653628
PMCPMC13515368

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.